| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of adhesion in an interface between a low dielectric constant substance being an organic base or carbon-doped SiO2 and the SiO2 etch stop of a TEOS base. SOLUTION: The invention relates to the manufacturing method of a semiconductor integrated circuit, in particular, the use method of alternate etch stop in dual damascene mutual connection improving the adhesion between the low dielectric constant organic substances. The etch stop substance is a silicon containing substance, and then converted into the low dielectric constant substance (k=3, 5-5), which becomes silicon oxide rich in silicon after ultraviolet irradiation, silylation and oxygen plasma.
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