| 摘要 |
PROBLEM TO BE SOLVED: To provide a deposited film forming method and an apparatus by plasma CVD method having improved discharge stability. SOLUTION: In the formation of plasma by mounting a substrate, on which a deposited film is to be formed, in a reaction vessel permitting evacuation, introducing a gas in the reaction vessel and applying at least two high frequency powers each having different frequency to the same high frequency electrode, a plurality of plasma blocking means are provided between the substrate and an exhausting means.
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