| 摘要 |
PROBLEM TO BE SOLVED: To provide form resist patterns finer than optical resolution dimensions by using the resist material thus far and exposure means relating to a pattern forming method. SOLUTION: Two layered resist layers consisting of a lower resist layer 2 which is relatively higher in an etching rate with respect to a developer and an upper resist layer 3 which is relatively smaller in an etching rate are exposed to form the resist patterns 1 of an undercut shape and thereafter the resist patterns 1 are subjected to slimming of their widths. |
