| 摘要 |
PROBLEM TO BE SOLVED: To provide a III group nitride semiconductor light emitting element on an active layer, of which effects of stress can be reduced without affecting the beam form and the confinement efficiency of the light and the carrier. SOLUTION: An n-Al0.07 In0.03 Ga0.9 N stress relaxation layer 106 and a p-Al0.07 In0.03 Ga0.9 N stress relaxation layer 110 are provided respectively between an n-Al0.12 Ga0.88 N cladding layer 105 and an n-GaN guide layer 107, and between a p-GaN guide layer 109 and a p-Al0.12 Ga0.88 N cladding layer 111.
|
