COMPOUND SEMICONDUCTOR FOR MAKING ULTRAHIGH-SPEED ELECTRONIC DEVICE AND METHOD FOR MAKING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide low cost and hardly breakable large diameter epitaxial wafers which can be preferably used as bases materials for forming ultrahigh- speed electronic devices with high productivity. SOLUTION: The compound semiconductor wafer for making the ultrahigh- speed electronic devices comprises a GaN substrate 1, a buffer layer 1c formed on the substrate, having thickness ranging from 10 nm to 1μm and comprising InP, and an epitaxial layer 1d formed on the buffer layer and including InP.