| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser element which has no variance of polarization angle rotation even when mounted on a heat sink, etc., by a junction down joining system and does not generate a crack damaging an active layer even when cleaved. SOLUTION: This semiconductor laser element 40 has a laser resonator structure 21 formed on striped mesa ridge 12 as a triangularly sectioned striped laminate structure including the top surface of the ridge as its base and a buried laminate structure wherein the ridge and the laser resonator structure 21 on the ridge are buried on a GaAs ridge substrate 14 which has on a substrate the striped mesa ridge 12 having a top surface in parallel to the substrate surface. The top surface of a p-side electrode 34 on the burying laminate structure is composed of a center cylindrical surface part 44 formed in stripes on the laser resonator structure, low cylindrical surface parts 46 which are provided on both sides of the center cylindrical surface part and lower than the center cylindrical surface part, and a high side cylindrical surface part 48 which is provided outside on the laser resonator structure along the respective low cylindrical surface parts and higher than the center cylindrical surface part.
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