APPARATUSES FOR MAKING SILICON SINGLE CRYSTAL AND METHOD FOR MAKING SILICON SINGLE CRYSTAL USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide an apparatuses for making silicon single crystals having apparatus configuration including an insulation ring at an extremity of a gas straightening pipe, in which stagnation of an inert gas over the insulation ring hardly occurs and which can effectively inhibit an accumulation of deposit from the vaporized substances on members arranged in a furnace directly over melt of raw material. SOLUTION: A gas straightening inner tube member 31 is arranged so as to surround a silicon single crystal 23 pulled up from silicon molten liquid 14. The lower portion of the gas straightening inner tube member 31 is disposed over the surface 14a of the molten silicon and in the crucible 12. Further, to the lower end of the gas straightening inner tube member 31 the insulating ring 32 arranged such that it's lower surface faces to the surface 14a of the silicon molten liquid is integrated projecting radially and outwardly. Additionally, to the outer periphery of the insulating ring 32, a gas straightening outer tube member 33 whose outer surface faces to the inner surface of the crucible 12 is integrated extending upwardly in the axial direction.