| 摘要 |
PROBLEM TO BE SOLVED: To efficiently and stably manufacture an insulating layer made of a silicon nitride layer of which N-H binding density is controlled. SOLUTION: In a method of manufacturing a semiconductor device formed by laminating a semiconductor layer 4, insulating layer 3 made of silicon nitride containing hydrogen, and electrode layers 6, 7, (1) the ratio of Si and N in the insulating layer 3 is monitored by the Rutherford backscattering method (RBS), and/or (2) the amount of H in the insulating layer 3 is monitored by the recoil hydrogen forward-scattered spectrum analysis (HFS). These analytical results are fed back to manufacturing conditions of the insulating layer 3 so that the semiconductor device is manufactured by controlling the ratio of Si and N and/or the amount of H in the insulating layer 3.
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