发明名称 DATA WRITING METHOD OF SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor device that is compatible with a data writing method in which frequency of erroneous read and possibility of data destruction are reduced. SOLUTION: The semiconductor memory device is provided with the first data transfer line BL1 that is electrically connected to the first memory cell block containing the first memory cell, the second data transfer line BL2 that is electrically connected to the second memory cell block located next to the first memory cell and containing the second memory cell, a data register R1 that permits data reproduction, data registers TR1, TR2 that are electrically connected to the data register R1, a charge/discharge circuit 10 that charges or discharges the N2 node based on the data stored in the data register TR1, the first connecting circuits Q1, Q2 that electrically connect N2 node and either of data transfer lines BL1 or BL2 mutually, data register R2 that permits data reproduction and the second connecting circuit Q5 that electrically connects the data register R2 and N2 node mutually.</p>
申请公布号 JP2002324400(A) 申请公布日期 2002.11.08
申请号 JP20020038244 申请日期 2002.02.15
申请人 TOSHIBA CORP 发明人 NOGUCHI MITSUHIRO;TAKEUCHI YUJI;AIDA AKIRA
分类号 G11C16/02;G11C16/04;G11C16/06;G11C16/10;G11C16/12;G11C16/34;H01L21/8247;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):G11C16/02;H01L21/824 主分类号 G11C16/02
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