| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming a silicon nitride film having not electrons or a hole trap in its film in the formation of the silicon nitride film on the surface of a silicon wafer and to provide an apparatus for forming the silicon nitride film. SOLUTION: A method of performing a nitriding treatment of a silicon wafer is performed by a method, where a solid dielectric is installed on the opposing surface of the electrode on at least one side of a pair of electrodes opposing to each other under the pressure in the vicinity of the atmospheric pressure and nitrogen-containing gas is introduced between the pair of the electrodes opposing to each other to apply a pulse-shaped electric field to the gas, whereby an obtainable plasma is brought into contact with the silicon wafer and a silicon nitride film is formed on the surface of the silicon wafer.
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