| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect semiconductor device which can increase the capacity of a gate insulation film and suppress the leakage current. SOLUTION: The field-effect semiconductor device comprises a silicon substrate 1, the gate insulation film formed on the silicon substrate, and a gate electrode 8 formed on the gate insulation film. The gate insulation film comprises a glass-like buffer layer 5, a rare earth oxide layer 6, and a dielectric layer 7 having a higher relative permittivity than the rare earth oxide, all formed in this order from the silicon substrate 1 side.
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