| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and an apparatus for etching inspection for accurately detecting the etching completion time of an insulating film in real time by relatively simple constitution without exerting any adverse influence on a specific circuit formation area. SOLUTION: At a corner distant from the specific circuit formation area 3 on a semiconductor substrate 2, an inspection pattern 5 is previously formed which consists of pads 6a and 7a for a probe and a couple of electrodes 6 and 7 formed of fine wiring parts 6b and 7b extended from the pads 6a and 7a to each other. When the insulating film 4 is formed on the inspection pattern 5 together with the circuit formation area 3, the pads 6a and 7a are partially exposed in the insulating film 4, and a voltage is applied between both the electrodes 6 and 7 through the exposed parts; and the insulating film starts etching in this state, and the point of time when the current value between the electrodes 6 and 7 varies is judged as the end point of time of the etching.
|
