| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory where memory operation margin can be secured sufficiently without changing the capacitance of a capacitor even if the size fluctuations of shrinkage or the like of an upper electrode occurs. SOLUTION: This semiconductor memory has the capacitor constituted so that the insulating film, where an opening having a fixed area is formed, is intervened between the upper electrode and the ferroelectric film of the capacitor constituted by pinching the ferroelectric film between the upper and lower electrodes.
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