发明名称 PSEUDO ALIGNMENT EPITAXIAL GROWTH SUBSTRATE CUT OUT OF CRYSTAL MAIN AXIS
摘要 PROBLEM TO BE SOLVED: To provide epitaxial growth template substrate pseudo aligned by cutting out of crystal main axis for inhibiting strain generating in interface in crystal growth and method thereof. SOLUTION: In the epitaxial growth template substrate in which thin film crystal is formed crystal from materials having lattice constants different from that of the template substrate crystal on the surface of the template substrate, the epitaxial growth template substrate and the method for making the same in which the epitaxial growth substrate is cut with the template substrate crystal orientation being tilted in an angle corresponding to the tilt angle formed between the crystal main axis of the thin film crystal formed on the surface of the template substrates and the crystal main axis of the template substrates.
申请公布号 JP2002321996(A) 申请公布日期 2002.11.08
申请号 JP20010130884 申请日期 2001.04.27
申请人 NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL & TECHNOLOGY 发明人 YAMADA AKIMASA;FONS PAUL;NIKI SAKAE
分类号 C30B25/18;C30B23/02;C30B23/08;H01L21/20;H01L21/205;(IPC1-7):C30B23/08 主分类号 C30B25/18
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