IRON SILICIDE FILM FORMING METHOD, SEMICONDUCTOR WAFER AND OPTICAL SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide an iron silicide film forming method, a semiconductor wafer and an optical semiconductor device for forming a thick and continuousβ-FeSi2 film having a good quality. SOLUTION: The method of forming an iron silicide film layer 4 orβ-FeSi2 on an Si wafer 1 having a crystal plane (001) on the surface comprises an SiGe layer forming step of epitaxially growing an SiGe layer 2 on the Si wafer, and an iron silicide layer forming step of epitaxially growing the iron silicide layer on the SiGe layer.