| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film gas sensor, whose responsiveness can be increased without having to depend on the kind of a substrate, and to provide a method of manufacturing the thin-film gas sensor. SOLUTION: A sensitive film 2 composed of tin oxide is formed on the substrate 1, composed of alumina. Electrodes 3 which are used to detect a change, in the physical property value of the sensitive film 2, are formed on the sensitive film 2. A heater 4, which is used to heat the sensitive film 2, is formed on the substrate 1 so as to surround the sensitive film 2. When the sensitive film 2 is formed on the substrate 1, irregularities on the surface of the substrate 1 are flattened, in such a way that they are 1/5 or smaller than the film thickness of the sensitive film 2, and the tin oxide is then formed by the atomic-layer growth method.
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