发明名称 ION BEMA IRRADIATION DEVICE AND A METHOD RELATED TO IT
摘要 PROBLEM TO BE SOLVED: To provide an ion beam irradiation device and an operating method related to it in a high frequency discharge plasma generator for the charge suppression of a substrate, which are capable of certainly igniting a plasma with ease and without introducing such problems as metal contamination. SOLUTION: In this ion beam irradiation device and its operating method, an ion beam 2 is made to run when igniting a plasma 16 in a plasma generator 10, and also a positive voltage with respect to the ground is applied to a plasma- producing chamber 12 from a DC source 36, and secondary electrons 40 produced by the collision of plasma-producing gas 18, flowing out of the plasma-producing chamber 12 to the path of the ion beam 2, and the ion beam 2 is drawn into the plasma-producing chamber 12 with the positive voltage, and then the plasma 16 is ignited by the trigger of the secondary electrons 40.
申请公布号 JP2002324511(A) 申请公布日期 2002.11.08
申请号 JP20010129014 申请日期 2001.04.26
申请人 NISSIN ELECTRIC CO LTD 发明人 HAMAMOTO SHIGEAKI
分类号 G21K5/00;G21K5/04;H01J37/20;H01J37/317;H01L21/223;H01L21/265;H05H1/24;H05H1/46 主分类号 G21K5/00
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