HIGH MOLECULAR COMPOUND, CHEMICAL AMPLIFICATION RESIST MATERIAL AND METHOD OF FORMING PATTERN

摘要

PROBLEM TO BE SOLVED: To provide a chemical amplification resist material that is sensitive to high-energy radiation and shows excellent sensitivity, high resolution, resistance to plasma etching in the wavelength of <=200 nm, particularly <=190 nm, consequently the material can be used as a resist material of small light absorption at the exposure to the F2 excimer laser to readily form patterns fine and vertical to the substrate whereby this material is suitable for forming the fine patterns for VLSI. SOLUTION: The objective polymer compound bears the recurring units represented by the following general formula (1) and the recurring units in which the hydrogen atom in carboxylic acid or in alcohol is substituted with a group unstable to acid.