| 摘要 |
PURPOSE: A method for etching an oxide layer of a semiconductor device is provided to be capable of improving the etch uniformity of the oxide layer by etching the oxide layer using mixed gases after uniformly coating moisture on the oxide layer through a rinse-dry process. CONSTITUTION: After forming an oxide layer at the upper portion of a wafer, a rinse process is carried out at the wafer by using deionized water. A dry process is then carried out at the resultant structure. At this time, the remaining deionized water is uniformly coated on the surface of the oxide layer. Then, an etching process is carried out on the oxide layer. Preferably, the rinse and dry process are sequentially carried out by in-situ. Preferably, the etching process is carried out by using HF gas of 150-300 sccm and vapor of the deionized water of 0-2 lpm.
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