| 摘要 |
PROBLEM TO BE SOLVED: To solve the transistor operation problem due to excessive gate leak current to the high gate voltage. SOLUTION: Epitaxial growth of a buffer layer 1-1, a channel layer 1-2, a spacer layer 1-3, a carrier source layer 1-4, an etching stopper layer 1-6, and a cap layer 1-7 are successively formed on a semiconductor substrate 1-10, a source electrode 1-8 and a drain electrode 1-9 are formed on a surface, and electrically connected to secondary electron gas. In addition, an insulating layer 1-11 consisting of a high dielectric material is deposited in an opening 1-15 where the cap layer 1-7 is removed, and further, a gate electrode 1-12 is formed. The gate leak current is significantly reduced by the insulating layer 1-11 consisting of the high dielectric material, and a proper transistor operation to the high gate voltage can be realized.
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