| 摘要 |
PROBLEM TO BE SOLVED: To provide an electrode structure in which influence to an insulating film due to ultrasonic vibration hardly occurs when a metal wire is welded to an electrode by an ultrasonic wire bonding method. SOLUTION: This electrode structure has a plurality of lower electrodes 1, 2 on one main surface of a semiconductor device, and the lower electrodes are arranged in bands. A metal upper electrode 3 is provided across the lower electrodes via an insulating film, and a metal wire 5 is welded on the upper electrode by an ultrasonic bonding method. When the metal wire is bonded, at least the direction 8 of an ultrasonic vibrational vector immediately under a metal wire welded portion 6 and part or all of contour lines 1 of the lower electrodes are parallel or diagonal. Since the vibrational vector direction and the contour line of the lower electrode cross diagonally, an ultrasonic vibration component is reduced which easily applies a stress to the insulating film extending along the contour line of the lower electrode, and hence the insulating film hardly receives a stress. |
