发明名称 IC PACKAGE DEVICE FOR HIGH FREQUENCY
摘要 <p>PROBLEM TO BE SOLVED: To provide an IC package device for high frequency where good heat-dissipation characteristics can be secured and that meets the requirements of good high frequency characteristics even if load impedance is higher than input impedance. SOLUTION: An IC chip 7 for high frequency is mounted at the position nearer to the output terminal side than the input terminal side on the cavity part C of a dielectric substrate 1. A stripline is constituted by an internal electrode pattern 41 buried in the dielectric substrate 1 and a ground electrode 6 on the input terminal side of the IC chip 7, and a non-stripline is constituted by wirings, in which an external electrode pattern 10 that is provided on the surface of the dielectric substrate 1 and is connected to the output terminal and an internal electrode pattern 42 that is buried in the dielectric substrate 1 and is connected to the IC chip 7 are connected via a through hole 9.</p>
申请公布号 JP2002324872(A) 申请公布日期 2002.11.08
申请号 JP20010126548 申请日期 2001.04.24
申请人 IWATSU ELECTRIC CO LTD 发明人 MINEGISHI ATSUSHI
分类号 H01L23/12;(IPC1-7):H01L23/12 主分类号 H01L23/12
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