| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor and an active matrix type display device having a simple manufacturing process, a high yield at a low manufacturing cost and a superior electric characteristic. SOLUTION: The process comprise the steps of forming a semiconductor layer on an insulating substrate utilizing a first mask, forming a first insulating film on the insulating substrate including the semiconductor, forming a gate having a gate capping layer on the first insulating film on the top of the semiconductor layer utilizing the second mask, exposing the semiconductor layer at the same time forming a spacer on the side wall of the gate, forming a high concentration source/drain region by implanting high concentration impurity ions into the exposed semiconductor layer, and forming a high concentration source/drain electrodes directly connecting to the source/drain region utilizing the third mask. |
