| 摘要 |
<p>A production method for photoacoustic gas sensor-use gas diffusion filter suitable for integral assembling into a small photoacoustic gas sensor and stable in characteristics, comprising the first step of etching an Si substrate (11) almost vertically from one surface to form recesses (12) as cavities in the gas sensor and almost vertically etching the Si substrate at a portion located on the outer side of the recesses from another surface to form a partition wall (18) with a specified thickness in the Si substrate, and the second step of anodizing the partition wall with a specified area excluding the partition wall masked to form a porous silicon layer (19) as a gas diffusion filter.</p> |
