MANUFACTURING METHOD OF HIGH DENSITY THIN FILM UNDER LOW TEMPERATURE CONDITION

摘要

PURPOSE: A thin film manufacturing method which is capable of depositing a high performance high quality thin film in the low temperature process by synchronizing two or more plasma generating sources for time and independently controlling output of the plasma generating sources. CONSTITUTION: In a method for forming a thin film, the thin film forming method comprises the steps of forming a thin film on a substrate by evaporating an evaporation source using intermittent voltage having a certain cycle; and irradiating ion beam or plasma generated from an ion beam source or plasma source onto a substrate during or after formation of the thin film to activate the surface of the substrate and fineness of the film in such a manner that voltage is impressed to the ion beam source or plasma source so that the voltage has the same cycle as the thin film formation cycle and is synchronized with the thin film formation period, wherein the method further comprises the step of integrating the ion beam source and the evaporation source to improve sputtering efficiency and dropping of electric discharge voltage, a total length mirror type sputtering evaporation source is axially integrated onto the upper part of a hall type ion beam source so that some of ions discharged from the ion beam source are projected onto the total length mirror type sputtering evaporation source.