发明名称 |
CMOS sensor circuit having a voltage control circuit controlling a gate potential of a photodiode reset transistor to a potential other than power source potentials |
摘要 |
The CMOS sensor circuit comprises a photodiode, a reset transistor resetting the photodiode to an initial voltage, and a voltage control circuit controlling a gate potential of the reset transistor to a potential other than power source potentials. The voltage control circuit consists of an inverter circuit driving a gate of the reset transistor. The inverter circuit includes a P-channel MOS transistor, an N-channel MOS transistor, and a transistor inserted between a drain of the P-channel MOS transistor and a drain of the N-channel MOS transistor so as to control a blooming.
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申请公布号 |
US2002163584(A1) |
申请公布日期 |
2002.11.07 |
申请号 |
US20020058789 |
申请日期 |
2002.01.30 |
申请人 |
FUJITSU LIMITED |
发明人 |
KOKUBUN MASATOSHI;YAMAMOTO KATSUYOSI;TSUCHIYA CHIKARA |
分类号 |
H01L31/10;H03K17/94;H04N5/335;H04N5/355;H04N5/359;H04N5/369;H04N5/374;H04N5/376;(IPC1-7):H04N3/14 |
主分类号 |
H01L31/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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