发明名称 MAGNETORESISTIVE ELEMENT AND MAGNETORESISTIVE MAGNETIC HEAD, MAGNETIC RECORDING APPARATUS AND MAGNETORESISTIVE MEMORY DEVICE USING THE SAME
摘要 <p>The present invention provides a magnetoresistive (MR) element that is excellent in MR ratio and thermal stability and includes at least one magnetic layer including a ferromagnetic material M-X expressed by M100-aXa. Here, M is at least one selected from Fe, Co and Ni, X is expressed by X1bX2cX3d (X1 is at least one selected from Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt and Au, X2 is at least one selected from Al, Sc, Ti, V, Cr, Mn, Ga, Ge, Y, Zr, Nb, Mo, Hf, Ta, W, Re, Zn and lanthanide series elements, and X¿3? is at least one selected from Si, B, C, N, O, P and S), and a, b, c and d satisfy 0.05 ≤ a ≤ 60, 0 ≤ b ≤ 60, 0 ≤ c ≤ 30, 0 ≤ d ≤ 20, and a = b + c + d.</p>
申请公布号 WO2002088765(A1) 申请公布日期 2002.11.07
申请号 JP2002004062 申请日期 2002.04.24
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