| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to improve chip operation properties by increasing carrier mobility from a photodiode region to a floating diffusion region. CONSTITUTION: The image sensor comprises a photodiode(PD), a floating diffusion region, a transfer transistor(Tx) formed between the photodiode(PD) and the floating diffusion region, and a guide gate(GG). The photodiode(PD) and the floating diffusion region are spaced apart from each other in a semiconductor substrate. The potential of the transfer transistor(Tx) is relatively high compared to the photodiode(PD), and relatively low compared to the floating diffusion region. The guide gate(GG) is formed between the photodiode(PD) and the floating diffusion region in order to control the voltage of the transfer transistor(Tx).
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