| 摘要 |
A light-sensing diode in a high resistivity semiconductor substrate of a first conductivity type, the substrate having a surface protected by an insulator, comprising a first well of the opposite conductivity type in the substrate, forming a junction with the substrate remote from the surface, the well further having sidewall portions; a second well of the first conductivity type fabricated in the substrate, at least partially surrounding the sidewalls of the first well, thereby forming a junction with the first well; the second well further having at least one extension along the surface under the insulator into the first well, thereby buried near-the-surface junctions with the first well and constricting the surface area within which the junction intersect the surface; and contacts for applying electrical bias across the junctions.
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