| 摘要 |
The semiconductor device and the method for fabricating the same includes a trench formed with a predetermined depth in a region of a substrate. A device isolation film is formed as a sidewall type spacers at both sides of the trench. A second conductivity type semiconductor film is formed in the trench. A second conductivity type transistor is formed in first and second regions of the substrate, and a first conductivity type transistor formed in a third region of the substrate.
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