发明名称 |
Etching method and etching apparatus, method for manufacturing semiconductor device, and semiconductor device |
摘要 |
In the etching method, ozone water containing an oxidation agent having an oxidation-reduction potential of 2V or more is supplied onto a metal compound film such as SrRuO film or the like, and the metal compound film is etched by oxidation-reduction reaction involving oxygen. The metal compound film, which is conventionally removed by a physical removal method, can be easily removed by wet etching. Manufacture of a capacitor containing an SrRuO film and the like can thus be facilitated.
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申请公布号 |
US2002164887(A1) |
申请公布日期 |
2002.11.07 |
申请号 |
US20020188871 |
申请日期 |
2002.07.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TOMITA HIROSHI;NADAHARA SOICHI |
分类号 |
H01L21/306;B44C1/22;C23F1/00;H01L21/00;H01L21/02;H01L21/302;H01L21/3213;H01L21/461;H01L23/528;H01L23/532;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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地址 |
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