发明名称 |
TRENCH-GATE SEMICONDUCTOR DEVICES AND THEIR MANUFACTURE |
摘要 |
Compact trench-gate semiconductor devices, for example a cellular power MOSFET with sub-micron pitch (Yc), are manufactured with self-aligned techniques that use sidewall spacers (52) in different ways. The trench-gate (11) is accommodated in a narrow trench (20) that is etched via a narrow window (52b) defined by the spacers (52) at sidewalls of a wider window (51a) of a mask (51) at the body surface (10a). The spacers (52) permit a source region (13) adjacent to the trench-gate (11) and an insulating overlayer (18) over the trench-gate (11) to be self-aligned to this narrow trench (20). The overlayer (18), which defines a contact window (18a) for a source electrode (33), is provided in a simple but reproducible manner by deposition and etch-back, after removing the spacers (52). Its overlap (y4, y4') with the body surface (10a) is well-defined, so reducing a short-circuit risk between the source electrode (33) and the trench-gate (11). Furthermore, implantation of the source region (13) is facilitated, and a channel-accommodating region (15) can also be provided using a high energy implant (61) after providing the insulating overlayer (18). |
申请公布号 |
WO02089195(A2) |
申请公布日期 |
2002.11.07 |
申请号 |
WO2002IB01375 |
申请日期 |
2002.04.25 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
PEAKE, STEVEN, T.;PETKOS, GEORGIOS;FARR, ROBERT, J.;ROGERS, CHRISTOPHER, M.;GROVER, RAYMOND, J.;FORBES, PETER |
分类号 |
H01L29/78;H01L21/331;H01L21/336;H01L21/338;H01L29/423 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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