Sputtering of components diffusing at process temperature, e.g. metallizing semiconductor chip with integrated circuit, alternates mixed target with maximum required concentration of minor component and target of pure main component

摘要

In sputtering several components with high enough diffusion coefficients for penetration at the process temperature, at least one target is a mixed, 2 component target (A) containing the minor component (I) in the maximum concentration needed. A predetermined (I) concentration, between the maximum concentration in (A) and zero, is obtained by alternate sputtering with (A) and a target of pure main component in layers of selected thickness.