| 摘要 |
1,095,387. Semi-conductor encapsulation. SIEMENS A.G. March 9, 1966 [March 11, 1965], No. 10267/66. Heading H1K. Semi-conductor devices are encapsulated in hardened inorganic cements. Fig. 1 (not shown) represents a silicon planar transistor which has been encapsulated by dipping or coating with a concentrated aqueous solution of magnesium chloride containing suspended magnesia which had previously been strongly heated and allowing this pasty mixture to harden. In the remaining embodiment three wires are drawn through holes in the base of a mould 5, a transistor is alloyed to the central wire, leads are connected between the transistor and the outer wires, and a slurry or suspension of cement-forming material cast around the transistor. Suitable compositions which harden in the presence of moisture are mixtures of magnesia and magnesium chloride, of zinc oxide and zinc chloride, of zinc oxide and zinc phosphate, of alumina and silica, and of zirconia and silica. When the cement has hardened the transistor is separated from the mould and a further transistor placed therein and encapsulated. This process produces a chain of encapsulated transistors disposed at intervals along the wires which are then cut to obtain the individual devices. |
