SILICON-BASED DIELECTRIC TUNNELING EMITTER

摘要

An emitter (50, 100) has an electron supply layer (10) and a silicon-based dielectric layer (20) formed on the electron supply layer (10). The silicon-based dielectric layer (20) is preferably less than about 500 Angstroms. Optionally, an insulator layer (78) is formed on the electron supply layer (10) and has openings defined within in which the silicon-based dielectric layer (20) is formed. A cathode layer (14) is formed on the silicon-based dielectric layer (20) to provide a surface for energy emissions (22) of electrons (16) and/or photons (18). Preferably, the emitter (50,100) is subjected to an annealing process (120,122) thereby increasing the supply of electrons (16) tunneled from the electron supply layer (10) to the cathode layer (14).