发明名称 |
Semiconductor laser device having a diffraction grating on a light emission side |
摘要 |
A semiconductor device and method for providing a light source suitable for use as a pumping light source in a Raman amplification system are provided. The device upon which the method is based includes an active layer configured to radiate light; a light reflecting facet positioned on a first side of the active layer; a light emitting facet positioned on a second side of the active layer thereby forming a resonant cavity between the light reflecting facet and the light emitting facet; and a partial diffraction grating having a predetermined length and positioned on a light emission side of the resonator. The predetermined length of the partial diffraction grating is selected such that the semiconductor device emits a light beam having a plurality of longitudinal modes within a predetermined spectral width of an oscillation wavelength spectrum of the semiconductor device. The predetermined length of the partial diffraction grating may be set in relation to a length of the resonant cavity, or in relation to a coupling coefficient kappai of the partial diffraction grating.
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申请公布号 |
US2002163948(A1) |
申请公布日期 |
2002.11.07 |
申请号 |
US20010983249 |
申请日期 |
2001.10.23 |
申请人 |
THE FURUKAWA ELECTRIC CO., LTD. |
发明人 |
YOSHIDA JUNJI;TSUKIJI NAOKI;FUNABASHI MASAKI |
分类号 |
G02F1/35;H01S3/06;H01S3/094;H01S3/0941;H01S3/30;H01S5/10;H01S5/12;H01S5/125;H01S5/14;(IPC1-7):H01S5/00;H01S3/08 |
主分类号 |
G02F1/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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