| 发明名称 |
Microelectronic piezoelectric structure and method of forming the same |
| 摘要 |
A high quality epitaxial layer of monocrystalline Pb(Zr,Ti)O3 can be grown overlying large silicon wafers by first growing an strontium titanate layer on a silicon wafer. The strontium titanate layer is a monocrystalline layer spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide.
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| 申请公布号 |
US2002164827(A1) |
申请公布日期 |
2002.11.07 |
| 申请号 |
US20020126772 |
申请日期 |
2002.04.19 |
| 申请人 |
RAMESH RAMOOTHY;WANG YU;FINDER JEFFREY M.;EISENBEISER KURT;YU ZHIYI;DROOPAD RAVINDRANATH |
发明人 |
RAMESH RAMOOTHY;WANG YU;FINDER JEFFREY M.;EISENBEISER KURT;YU ZHIYI;DROOPAD RAVINDRANATH |
| 分类号 |
H01L41/08;B32B9/00;H01L21/02;H01L21/316;H01L21/8246;H01L27/105;H01L41/18;H01L41/187;H01L41/22;H01L41/24;(IPC1-7):H01L21/00 |
主分类号 |
H01L41/08 |
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