发明名称 Memory device
摘要 A memory device includes an array of memory cells. When in use, each cell can store a charge representing a binary digit of data. Data lines are connected to the memory cells. The data lines are connected to both apply a voltage to the cells to store the charge and to receive a voltage from charge stored in the cells to read a binary digit of data. Read lines are connected to the cells to selectively connect the cell to the data line to apply voltage either from the data lines to the cells or from the cells to the data lines. Control lines also connect to the cells to configure the cells to provide a capacitance to which the data lines can apply voltage and to configure the cells to maintain charge stored in the cells by virtue of a power supply.
申请公布号 US2002163824(A1) 申请公布日期 2002.11.07
申请号 US20020113813 申请日期 2002.03.27
申请人 ATHANASSIADIS HARRY HARALAMBOS 发明人 ATHANASSIADIS HARRY HARALAMBOS
分类号 G11C15/04;(IPC1-7):G11C15/00 主分类号 G11C15/04
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