发明名称 |
PROTECTION DIODE FOR IMPROVED RUGGEDNESS OF A RADIO FREQUENCY POWER TRANSISTOR AND SELF-DEFINING METHOD TO MANUFACTURE SUCH PROTECTION DIODE |
摘要 |
A semiconductor arrangement including: a substrate having a substrate layer (13) with an upper and lower surface, the substrate layer (13) being of a first conductivity type; a first buried layer (12) in the substrate, extending along said lower surface below a first portion of said upper surface of said substrate layer (13), and a second buried layer (12) in the substrate, extending along said lower surface below a second portion of said upper surface of said substrate layer (13); a first diffusion (26) in said first portion of said substrate layer (13), being of a second conductivity type opposite to said first conductivity type and having a first distance to said first buried layer (12) for defining a first breakdown voltage between said first diffusion (26) and said first buried layer (12); a second diffusion (45) in said second portion of said substrate layer (13), being of said second conductivity type and having a second distance to said second buried layer (12) for defining a second breakdown voltage between said second diffusion (45) and said second buried layer (12); said first distance being larger than said second distance such that said first breakdown voltage is larger than said second breakdown voltage. |
申请公布号 |
WO0231883(A3) |
申请公布日期 |
2002.11.07 |
申请号 |
WO2001EP11168 |
申请日期 |
2001.09.26 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
MAGNEE, PETRUS, H., C.;VAN RIJS, FREERK;HUIZING, HENDRIK, G., A. |
分类号 |
H01L21/331;H01L21/822;H01L21/8222;H01L27/02;H01L27/04;H01L27/06;H01L29/08;H01L29/10;H01L29/732;H01L29/861 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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