发明名称 |
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device, in which a surface (1) of a semiconductor body (2) is provided with a first metallization layer comprising conductor tracks (3, 4), among which a number having a width w an a number having a greater width. On this structure an insulating layer (5) is deposited by means of a process in which the thickness of the formed insulating layer (5) is dependent on the width of the subjacent conductor tracks (3, 4), after which a capping layer (6) is deposited on the insulating layer (5). Then the silicon oxide layer is planarized by means of a polishing process. In this method, the conductor tracks having a width greater than w are split up into a number of parallel strips (10) having a width w, which strips are locally connected to one another. |
申请公布号 |
WO02089200(A2) |
申请公布日期 |
2002.11.07 |
申请号 |
WO2002IB01361 |
申请日期 |
2002.04.17 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
LOUS, ERIK, J.;VAN DE GOOR, ALBERTUS, T., M.;HERINGA, ANCO |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|