Thin film magnetic memory suitable for stable data read-out and writing

摘要

The thin film magnetic memory on a semiconductor substrate comprises numerous, data storing memory cells, each contg. an access element, which is rendered conductive for forming a path of data read-out current.A magnetic memory section is series-connected to the access element and contains a resistor, fluctuating according to memory data. On the substrate is formed first magnetic film (102) and has a fixed magnetising direction. On the substrate is formed a second magnetic film (103) and is magnetised in a direction corresp. to external magnetic field. The two magnetic films sandwich an insulating film.