METALLIC FILM FORMING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

There has been a problem of the material deformation due to the difference of coefficient of thermal expansion between the wiring metallic film and the insulating film around the wiring metallic film and the difference of hardness between them and a problem of voids produced in the wiring film. According to the invention, the problems are solved and the initial characteristics and the reliability of long-term operation are improved. A method for manufacturing a semiconductor device comprises the steps of heating the metallic film to a temperature of the sum of the stress yield point of the metallic film and +50 DEG C (B) and maintaining the temperature for a predetermined time, and heating the metallic film to a temperature (C) which is above the maintained temperature and at which crystalline grains grow in the metallic film so as to grow crystalline grains therein.