Laser device based on silicon nanostructures

摘要

A silicon-based light-emitting device is described and comprises an active region, an excitation system which can bring about a condition of inversion of the population of carriers within the active region, and semi-reflective elements which can define a resonant optical structure in which the active region is inserted so as to bring about stimulated emission of coherent light, The active region comprises silicon nanostructures immersed in a silicon-dioxide-based dielectric matrix.