发明名称 |
Ordered two-phase dielectric film, and semiconductor device containing the same |
摘要 |
A porous, low-k dielectric film that has good mechanical properties as well as a method of fabricating the film and the use of the film as a dielectric layer between metal wiring features are provided. The porous, low-k dielectric film includes a first phase of monodispersed pores having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially located on sites of a three-dimensional periodic lattice; and a second phase which is solid surrounding the first phase. Specifically, the second phase of the film includes (i) an ordered element that is composed of nanoparticles having a diameter of from about 1 to about 10 nm that are substantially uniformly spaced apart and are essentially arranged on sites of a three-dimensional periodic lattice, and (ii) a disordered element comprised of a dielectric material having a dielectric constant of about 2.8 or less.
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申请公布号 |
US2002164891(A1) |
申请公布日期 |
2002.11.07 |
申请号 |
US20010848153 |
申请日期 |
2001.05.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
GATES STEPHEN MCCONNELL;MURRAY CHRISTOPHER B.;NITTA SATYANARAYANA V.;PURUSHOTHAMAN SAMPATH |
分类号 |
H01L21/312;H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L47/00;H01L21/00;H01L35/24;H01L23/58;H01L51/00;H01L51/40;H01L21/302;H01L21/461;H01L21/31;H01L21/469 |
主分类号 |
H01L21/312 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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