| 摘要 |
A novel structure of nonvolatile memory is formed on p type silicon and includes a stacked gate, a tunneling dielectric layer, a floating gate (FG), a dielectric layer and a control gate (CG). One side of the stacked gate has a source region and the other has a drain region, wherein the surface of the source region includes a thin metal silicide connected with a channel region to form a Schottky barrier. A tilted angle implant with As or P doping is performed on the p type silicon substrate to form a drain region and extend a portion of the drain region to a channel region under the stacked gate. For implanting, an n doped source region is also formed, creating an offset between the source region and the channel region as a result of the tilted angle implant. For programming, the source region is grounded, positive voltage is applied to the drain region and the gate, such that the hot carriers inject into the floating gate through the channel adjacent to the source region.
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