发明名称 |
Low voltage transient voltage suppressor and method of making |
摘要 |
A method of providing a Transient Voltage Suppression (TVS) device is described utilizing a Metal Oxide Semiconductor (MOS) structure and an Insulated Gate Bipolar Transistor (IGBT) structure. The MOS based TVS devices offer reduced leakage current with reduced clamp voltages between 0.5 and 5 volts. Trench MOS based TVS device (72) provides an enhanced gain operation, while device (88) provides a top side drain contact. The high gain MOS based TVS devices provide increased control over clamp voltage variation.
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申请公布号 |
US2002163021(A1) |
申请公布日期 |
2002.11.07 |
申请号 |
US20010849720 |
申请日期 |
2001.05.04 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES LLC |
发明人 |
ROBB FRANCINE Y.;PEARSE JEFFREY;HEMINGER DAVID M.;ROBB STEPHEN P. |
分类号 |
H01L27/06;H01L29/417;H01L29/78;(IPC1-7):H01L29/80 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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