Silicon electron emitter

摘要

A high emission electron emitter and a method of fabricating a high emission electron emitter are disclosed. A high emission electron emitter 10 includes an election injection layer 1. an active layer of high porosity porous silicon material 3 in contact with the electron iniection layer 1, a contact layer of low porosity porous silicon material 5 in contact with the active layer 3 and including an interface surface 12 with a heavily doped region 8, and an optional top electrode 7 in contact with the contact layer 5. The contact layer 5 reduces contact resistance between the active layer 3 and the top electrode 7 and the heavily doped region 8 reduces resistivity of the contact layer 5 thereby increasing electron emission efficiency and stable electron emission from the top electrode 7. The electron injection layer 1 is made from an electrically conductive material such as n+ semiconductor, n+ single crystal silicon, a metal, a silicide, or a nitride. The active layer 3 and the contact layer 5 are formed in a layer of silicon material 6 that is deposited on the electron injection layer 1 and then electrochemically anodized in a hydrofluoric acid solution. Prior to the anodization. the interface surface 12 can be doped to form the heavily doped region 8. The layer of silicon material 8 can be porous epitaxial silicon, porous polysilicon, porous amorphous silicon, and porous silicon carbide.