| 摘要 |
PURPOSE: A method for forming a multilayer insulation of a semiconductor device is provided to be capable of preventing the generation of leakage current due to the penetration of contaminants into a metal line and reducing dielectric constant of an intermetal dielectric regardless of stress value. CONSTITUTION: After forming an insulating layer(11) on a semiconductor substrate(10), the first metal lines(12) are formed on the insulating layer. The first insulating layer made of three layers(13A,13B,13C), is formed on the resultant structure. At this time, the stress of the bottommost layer(13A) of the first insulating layer is larger than the other layers(13B,13C). After forming an SOG(Spin On Glass) layer(14) on the first insulating layer, the SOG layer is polished and hardened. Then, the second insulating layer made of four layers(15A,15B,15C,15D), is formed on the resultant structure. At this time, the stress of the bottommost layer(15A) of the second insulating layer is larger than the other layers(15B,15C,15D). Then, the second metal lines(16) are formed on the resultant structure.
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