| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of improving properties of a gate insulating layer by using a double oxynitride layer as the gate insulating layer. CONSTITUTION: The first oxynitride layer and a conductive layer are sequentially formed on a semiconductor substrate(1). A gate(3) and a gate insulating layer(2) are formed by etching the conductive layer and the first oxynitride layer. At this time, polymers are formed on the surface of the substrate. The polymers are removed by BOE(Buffered Oxide Etchant), and the gate insulating layer existing at the gate edge portion is simultaneously etched. The second oxynitride layer(7) is formed on the gate edge portion.
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