| 摘要 |
PURPOSE: A fabrication method of semiconductor devices is provided to improve a reliability by preventing the opening of a pad and a wire during wire bonding. CONSTITUTION: A first interlayer dielectric having a first plug is formed on a semiconductor substrate having a transistor. A plurality of metal lines(104a,104b) are formed to connect with the first plug. A second interlayer dielectric(106) having a second plug is formed on the resultant structure. A plurality of second metal lines(109a,109b) are formed to connect with the second plug. After forming a third interlayer dielectric(111) on the resultant structure, a desired portion of the second metal lines(109a,10b) is exposed by selectively etching the second interlayer dielectric(111). A wire(131) is then bonded to the exposed second metal line. |
